Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
![High Trigger Current NPN Transistor With Excellent Double-Snapback Performance for High-Voltage Output ESD Protection | Semantic Scholar High Trigger Current NPN Transistor With Excellent Double-Snapback Performance for High-Voltage Output ESD Protection | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/200e1a96f73d08a5985c592bf36fba638d94cc61/2-Figure3-1.png)
High Trigger Current NPN Transistor With Excellent Double-Snapback Performance for High-Voltage Output ESD Protection | Semantic Scholar
![Figure 2 from A Study of Snapback and Parasitic Bipolar Action for ESD NMOS Modeling | Semantic Scholar Figure 2 from A Study of Snapback and Parasitic Bipolar Action for ESD NMOS Modeling | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/657e63b8be79c1adb0fdddc63cb3433d8c9cb751/2-Figure2-1.png)
Figure 2 from A Study of Snapback and Parasitic Bipolar Action for ESD NMOS Modeling | Semantic Scholar
![Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/a4bb9ffde2252a6d6f877188410ad5e10e2d55d4/2-Figure2-1.png)
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
![14.5.1 ESD Performance from 3.3V NMOS transistor — GlobalFoundries GF180MCU PDK 0.0.0-111-gde3240d documentation 14.5.1 ESD Performance from 3.3V NMOS transistor — GlobalFoundries GF180MCU PDK 0.0.0-111-gde3240d documentation](https://gf180mcu-pdk.readthedocs.io/en/latest/_images/ESD_Characterization1.png)